logo

IXST15N120BD1 Datasheet, IXYS Corporation

IXST15N120BD1 capability equivalent, improved scsoa capability.

IXST15N120BD1 Avg. rating / M : 1.0 rating-15

datasheet Download

IXST15N120BD1 Datasheet

Features and benefits


* High Blocking Voltage
* Epitaxial Silicon drift region - fast switching - small tail current - low switching losses
* MOS gate turn-on for drive simplicity .

Application

Mounting torque (TO-247) 1.13/10 Nm/lb.in. 300 260 6 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) fro.

Image gallery

IXST15N120BD1 Page 1 IXST15N120BD1 Page 2

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts